WebPatent Application US20240229266A1 for the present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal … WebResistive random access memory device comprising metal halide and method for preparing the same is an invention by Hyun Suk Jung, Seoul KOREA, REPUBLIC OF. This patent application was filed with the USPTO on Thursday, December 20, 2024
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NOTES Two-Dimensional NMR Approach to the Study of …
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